Contact resistance modeling for NEMS ohmic relays using highly doped SiGe contact

In an ohmic nano relay, the surface quality of the contact materials is crucial in determining the performance of the device and also its lifetime. An in depth analysis of the surface of an highly doped poly SiGe material, considered as a potential candidate for relay applications, is carried out. A new contact resistance model based on the contact surface characteristics, suction in presence of moisture and wear susceptibility, are elaborated. Results indicate that highly doped SiGe contacts can lead to contact resistance of few tens of kOhm while reducing the wear probability. Due to large wettabililty, however, the device needs to operate in a sealed and dry environment.

ISBN:9781482205848

Jaar van publicatie:2013