Double-Pulse Characterization of GaN-on-Sapphire FETs for Technology Development

© 2016 IEEE. A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 μm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.

ISBN:9781509022144

Jaar van publicatie:2016

BOF-keylabel:ja

IOF-keylabel:ja

Authors from:Higher Education