On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in ΙΙΙV/High-k MOS Stack

© 1963-2012 IEEE. Operating temperature has a significant imp-act on the reliability of metal-oxide-semiconductor field effect transistors (MOSFETs). In Si-channel MOSFETs, the effective density of charged oxide defects ( Δ Neff) at operating condition typically shows an Arrhenius temperature dependence with EA 0.1 eV. In contrast, apparent non-Arrhenius temperature dependence is reported here for InGaAs devices subjected to BTI stress in a wide range of temperature (77-373 K). This apparent non-Arrhenius temperature dependence is explained here by the presence of three distinct populations of electron traps. Capture-emission-time maps are derived from the experimental data, and are modeled by three bivariate distributions of energy barriers for the capture and emission processes. The total ΔV th measured in biaserature-instability experiments reflects different contributions from the three defect populations, depending on the chosen temperature range, and on the measurement timing. We show that a correct description of the three defect distributions is crucial to properly assess their impact on the device performance.

Jaar van publicatie:2018

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:1

Authors from:Government, Higher Education

Toegankelijkheid:Open