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Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

Boekbijdrage - Boekhoofdstuk Conferentiebijdrage

© 2017 IEEE. We report on Atomic Layer Deposition Titanium (ALD Ti) for FinFET source/drain contact applications. On planar test structures, we accurately benchmark contact resistivity (ρc) of ALD Ti, ∼1.4×10-9 ω·cm2 on Si:P and ∼2.0×10-9 ω·cm2 on SiGe:B, among to lowest reported values in literature. Ultralow ρc is resulting from enhanced Ti/Si(Ge) reactivity originating in the ALD process. We also demonstrate capability of this process to significantly lower Rc on FinFETs by allowing a lateral contact into the S/D area effectively maximizing the contacting area.
Boek: IEEE International Interconnect Technology Conference - IITC
Pagina's: 1 - 3
ISBN:9781509064731
Jaar van publicatie:2017