< Terug naar vorige pagina
Onderzoeker
Po-Chun Hsu
- Disciplines:Keramische en glasmaterialen, Materialenwetenschappen en -techniek, Halfgeleidermaterialen, Andere materiaaltechnologie
Affiliaties
- Functionele materialen (SIEM) (Afdeling)
Lid
Vanaf1 aug 2020 → 28 feb 2022 - Functionele Materialen (Afdeling)
Lid
Vanaf17 sep 2016 → 31 jul 2020
Projecten
1 - 1 of 1
- Elektrische modellering en karakterisering van „extended defects“ in n type InxGa1-xAs-systeemVanaf23 aug 2017 → 11 jan 2022Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 10 van 21
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs System(2022)
Auteurs: Po-Chun Hsu, Marc Heyns
- Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy(2021)
Auteurs: Po-Chun Hsu
- Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy(2021)
Auteurs: Po-Chun Hsu, Stefan De Gendt
- Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration(2020)
Auteurs: Po-Chun Hsu
Pagina's: 4827 - 4833 - Polarization Control of Epitaxial Barium Titanate (BaTiO3) Grown by Pulsed-Laser Deposition on a MBE-SrTiO3/Si(001) Pseudo-Substrate(2020)
Auteurs: Tsang-Hsuan Wang, Po-Chun Hsu, Jan Genoe, Clement Merckling
Pagina's: 104104 - 104104 - A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1-x-based Layers for Ovonic Threshold Switching Selectors(2020)
Auteurs: Po-Chun Hsu, Andre Stesmans
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers(2020)
Auteurs: Po-Chun Hsu, Clement Merckling, Marc Heyns
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers (vol 9, 033001, 2020)(2020)
Auteurs: C Claeys, Po-Chun Hsu, Y Mols, H Han, H Bender, F Seidel, P Carolan, Clement Merckling, A Alian, N Waldron, et al.
- The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As(2019)
Auteurs: Po-Chun Hsu, Clement Merckling, Marc Heyns
- Au-induced improvements in the grain stability and mechanical properties of Ag-based alloy wires under electrical current stressing(2019)
Auteurs: Po-Chun Hsu
Pagina's: 15897 - 15911