Onderzoeker
Dimitri Linten
- Trefwoorden:Elektronica en elektrotechniek, Informatie- en communicatietechnologie, Werktuigkunde
- Disciplines:Medische en gezondheidswetenschappen, Ingenieurswetenschappen en technologie
Affiliaties
- Elektriciteit (Departement)
Lid
Vanaf1 apr 2007 → 31 dec 2007 - MPEG (Onderzoeksgroep)
Lid
Vanaf1 jan 2006 → 31 dec 2009 - Elektronica en Informatica (Departement)
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Vanaf1 jan 2002 → 31 dec 2005 - Werktuigkunde (Departement)
Lid
Vanaf1 aug 2001 → 31 dec 2001
Publicaties
1 - 10 van 13
- Reliability and Variability-Aware DTCO Flow(2021)Series: IEEE International Reliability Physics Symposium Proceedings
Auteurs: G. Rzepa, M. Karner, O. Baumgartner, G. Strof, F. Schanovsky, F. Mitterbauer, C. Kernstock, H. W. Karner, P. Weckx, Geert Hellings, et al.
- A BSIM-Based Predictive Hot-Carrier Aging Compact Model(2021)Series: IEEE International Reliability Physics Symposium Proceedings
Auteurs: Yang Xiang, S. Tyaginov, M. Vandemaele, Zhuoheng Wu, Javier Franco, E. Bury, Britt Truijen, Bertrand Parvais, Dimitri Linten, B. Kaczer
- Technology Impact on the Low Frequency Noise of Si and Si/SiGe Superlattice Input-Output FinFETs(2020)Series: 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
Auteurs: Cor Claeys, Geert Hellings, Hiroaki Arimura, Bertrand Parvais, L. A. Ragnarsson, Harold Dekkers, Tom Schram, Dimitri Linten, Naoto Horiguchi, Eddy Simoen, et al.
Aantal pagina's: 2 - Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates(2020)
Auteurs: Stefano Bonaldo, En Xia Zhang, Simeng E. Zhao, Vamsi Putcha, Bertrand Parvais, Dimitri Linten, Simone Gerardin, Alessandro Paccagnella, Robert A. Reed, Ronald D. Schrimpf, et al.
Pagina's: 1312-1319 - Defect-based compact modeling of random telegraph noise(2020)
Auteurs: Pieter Weckx, Ben Kaczer, Marko Simicic, Bertrand Parvais, Dimitri Linten
Pagina's: 517-532Aantal pagina's: 16 - Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures(2020)Series: IEEE International Reliability Physics Symposium Proceedings
Auteurs: Alexander Grill, E. Bury, J. Michl, S. Tyaginov, Dimitri Linten, T. Grasser, Bertrand Parvais, B. Kaczer, M. Waltl, I. Radu
Pagina's: 1-6Aantal pagina's: 6 - Semiconductor Technologies for next Generation Mobile Communications(2018)Series: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
Auteurs: N. Collaert, A. Alian, Sipeng Chen, V. Deshpande, M. Ingels, V. Putcha, A. Sibaja-Hernandez, Barend van Liempd, A. Vais, A. Vandooren, et al.
Pagina's: 1-13Aantal pagina's: 13 - Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal nanowire technology(2018)Series: Digest of Technical Papers - Symposium on VLSI Technology
Auteurs: G. Hellings, Hans Mertens, A. Subirats, Eddy Simoen, Tom Schram, L. A. Ragnarsson, M. Simicic, Sipeng Chen, Bertrand Parvais, D. Boudier, et al.
Pagina's: 85-86Aantal pagina's: 2 - A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability(2018)
Auteurs: B. Kaczer, Judith Franco, P. Weckx, Ph.J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, Dimitri Linten, F. Catthoor, et al.
Pagina's: 186-194 - ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool?(2009)
Auteurs: M. Scholz, Dimitri Linten, S. Thijs, S. Sangameswaran, M. Sawada, T. Nakaei, T. Hasebe, G. Groeseneken
Pagina's: 3418-3426