Onderzoeker
Eddy Simoen
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Vakgroep Vastestofwetenschappen (Departement)
Lid
Vanaf1 okt 2013 → Heden
Projecten
1 - 1 of 1
- Studie van de eigenschappen van de intrinsieke puntdefecten in monokristallijn germaniumVanaf1 jan 2010 → 31 dec 2015Financiering: FWO Onderzoeksproject (incl. WEAVE projecten)
Publicaties
1 - 10 van 79
- Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs(2023)
Auteurs: Hongyue Wang, Eddy Simoen, Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, Zongqi Cai, Yan Peng, Xiwei Wang, et al.
- 3D backside integration of FinFETs : is there an impact on LF noise?(2023)
Auteurs: Eddy Simoen, Anne Jourdain, Cor Claeys, Anabela Veloso
- Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers(2022)
Auteurs: P.-C. (Brent) Hsu, Eddy Simoen, Geert Eneman, Clement Merckling, Yves Mols, Marc Heyns
- Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy(2021)
Auteurs: Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen, Stefan De Gendt, Arturo Sibaja-Hernandez, Jinyan Wang
- Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy(2021)
Auteurs: Po-Chun Hsu, Eddy Simoen, Hu Liang, Brice De Jaeger, Benoit Bakeroot, Dirk Wellekens, Stefaan Decoutere
- Frontiers in low-frequency noise research in advanced semiconductor devices(2021)
Auteurs: Eddy Simoen, Anabela Veloso, Barry O'Sullivan, Kenichiro Takakura, Cor Claeys
Aantal pagina's: 1 - Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets(2021)
Auteurs: Bogdan Cretu, Anabela Veloso, Eddy Simoen
Aantal pagina's: 1 - Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks(2021)
Auteurs: Danghui Wang, Tianhan Xu, Eddy Simoen, Bogdan Govoreanu, Cor Claeys, Yang Zhang
Pagina's: 948 - 953 - Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers(2020)
Auteurs: C. Claeys, P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, C. Merckling, A. Alian, N. Waldron, et al.
- A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors(2020)
Auteurs: P.-C. Hsu, Eddy Simoen, D. Lin, A. Stesmans, L. Goux, R. Delhougne, P. Carolan, H. Bender, G. S. Kar