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Onderzoeker
Abhinav Gaur
- Disciplines:Keramische en glasmaterialen, Materialenwetenschappen en -techniek, Halfgeleidermaterialen, Andere materiaaltechnologie
Affiliaties
- Functionele materialen (SIEM) (Afdeling)
Lid
Vanaf1 aug 2020 → 30 sep 2020 - Functionele Materialen (Afdeling)
Lid
Vanaf13 jul 2015 → 31 jul 2020
Projecten
1 - 1 of 1
- Elektronisch gedrag in het 2D transitie-metaal-dichalcogenide MOS systeemVanaf1 feb 2016 → 7 jul 2020Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 8 van 8
- Understanding Charge Behaviour in a 2D Transition Metal Dichalcogenide MOS System(2020)
Auteurs: Abhinav Gaur, Marc Heyns
- Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2(2019)
Auteurs: Abhinav Gaur, Marc Heyns
- 2D materials: roadmap to CMOS integration(2018)
Auteurs: Steven Brems, Abhinav Gaur, Alessandra Leonhardt, Iuliana Radu
Aantal pagina's: 4 - MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-k Dielectrics(2017)
Auteurs: Haodong Zhang, Goutham Arutchelvan, Johan Meersschaut, Abhinav Gaur, Marc Heyns, Iuliana Radu, Annelies Delabie
Pagina's: 6772 - 6780 - Demonstration of 2e12 cm⁻² eV⁻¹ 2D-oxide interface trap density on back-gated MoS₂ flake devices with 2.5 nm EOT(2017)
Auteurs: Abhinav Gaur, Yashwanth Balaji, Jan Van Houdt, Marc Heyns, Iuliana Radu
Pagina's: 145 - 149 - Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon(2015)
Auteurs: Abhinav Gaur
- Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes(2015)
Auteurs: Abhinav Gaur
Pagina's: 234 - 237 - Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates(2015)
Auteurs: Abhinav Gaur
Pagina's: 2450 - 2456