Method for realizing heterogeneous III-V silicon photonic integrated circuits

A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

Octrooi-publicatienummer: US20160327759

Bron: USPTO

Jaar aanvraag: 2016

Jaar toekenning: 2017

Jaar van publicatie: 2017

Status: Toegewezen

Technologiedomeinen: Optica, Semiconductoren

Gevalideerd voor IOF-sleutel: Ja