Wet-chemical approaches for surface and interface processing of two-dimensional MX2 semiconductors KU Leuven
While fabrication strategies for Si and SiGe based CMOS technologies are well established, the use of 2D MX2 semiconductors as channel material poses new problems. In such device applications, etching remains an essential step (e.g. layer selective etching, recessing and contamination removal). In contrast to conventional dry etching techniques that can damage the MX2 monolayer, wet-chemical etching provides a simple alternative for obtaining ...