Publications
Chosen filters:
Chosen filters:
Nucleation Mechanism during WS2 Plasma Enhanced Atomic Layer Deposition on Amorphous Al2O3 and Sapphire Substrates KU Leuven
The structure, crystallinity and properties of as-deposited two-dimensional (2D) transition metal dichalcogenides are determined by nucleation mechanisms in the deposition process. 2D materials grown by atomic layer deposition (ALD) in absence of a template, are polycrystalline or amorphous. Little is known about their nucleation mechanisms. Therefore, we investigate the nucleation behavior of WS2 during plasma enhanced ALD from WF6, H2 plasma ...
Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substratesâ Interuniversity Microelectronics Centre KU Leuven
This paper quantitatively assessed the intrinsic defectivity of as-deposited molybdenum disulfide (MoS2) monolayers on sapphire substrates using atomically resolved scanning tunneling microscopy and spectroscopy. We observed two types of point defects - protrusion-like and depression-like with average densities of (2.4 +/- 2) center dot 1013 cm-2 and (1.9 +/- 1.4) center dot 1012 cm-2, respectively. The position of the electron state within the ...
Heat-transfer based characterization of DNA on synthetic sapphire chips Hasselt University KU Leuven
In this study, we show that synthetic sapphire (Al2O3), an established implant material, can also serve as a platform material for biosensors comparable to nanocrystalline diamond. Sapphire chips, beads, and powder were first modified with (3-aminopropyl) triethoxysilane (APTES), followed by succinic anhydride (SA), and finally single-stranded probe DNA was EDC coupled to the functionalized layer. The presence of the APTES-SA layer on sapphire ...
Synthesis of Few-Layered Transition-Metal Dichalcogenides by Ion Implantation of Chalcogen and Metal Species into Sapphire KU Leuven
The growth of transition-metal dichalcogenides (TMDCs) has been performed so far using most established thin-film growth techniques (e.g., vapor phase transport, chemical vapor deposition, molecular beam epitaxy, etc.). However, because there exists no self-limiting mechanism for the growth of TMDCs, none of these techniques allows precise control of the number of TMDC layers over large substrate areas. Here, we explore the ion implantation of ...
Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces KU Leuven
The increasing scientific and industry interest in 2D MX2 materials within the field of nanotechnology has made the single crystalline integration of large area van der Waals (vdW) layers on commercial substrates an important topic. The c-plane oriented (3D crystal) sapphire surface is believed to be an interesting substrate candidate for this challenging 2D/3D integration. Despite the many attempts that have been made, the yet incomplete ...
Crystal plane dependent growth of aligned single-walled carbon nanotubes on sapphire KU Leuven
On single-crystal substrates, such as sapphire (alpha-Al 2O 3) and quartz (SiO 2), single-walled carbon nanotubes (SWNTs) align along specific crystallographic axes of the crystal, indicating that the SWNT growth is influenced by the crystal surface. Here, we show that not only the orientation, but also the diameter and chirality of SWNTs are affected by the crystal plane of the sapphire substrate. The aligned SWNTs grown on the A- and R-planes ...
Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface Interuniversity Microelectronics Centre KU Leuven
Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2 ) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial ...
Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface KU Leuven
Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS2) crystal domain bimodality and yield a single-crystalline MoS2 monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS2 monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial ...