Towards graphoepitaxy of semiconducting 2D single crystals on dielectric substrate patterns for next generation nanoelectronic devices KU Leuven
Semiconducting two-dimensional (2D) transition metal dichalcogenides like MoS2 and WS2 are attracting great interest for application in ultra-scaled nano-electronic devices because of their monolayer thickness, large band gap, low dielectric constants and lack of dangling bonds. A key prerequisite for their industrial exploitation is the availability of manufacturable deposition techniques like Chemical Vapor Deposition (CVD) to create ...