A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice KU Leuven Ghent University
The presence of deep levels in a silicon–oxygen (Si–O) superlattice (SL) deposited on p-type silicon substrates has been investigated by deep-level transient spectroscopy (DLTS) on thermally evaporated Cr Schottky barriers (SBs). The SLs have been fabricated with different thicknesses of the silicon interlayers, formed by chemical vapor deposition. It is shown that a broad band of hole traps is present near the surface of the SB, which is ...