Inverse magnetoelectric effects at the nanoscale for advanced magnetic memories KU Leuven
Magnetic memories are presently intensely researched for embedded memory applications. Especially magnetic random-access memory (MRAM) has recently been started to be commercialized in consumer appliances and it can be expected that it will become broadly used in the near future. In such magnetic memories, the information is stored in the orientation of the perpendicular magnetization in a magnetic tunnel junction. The resistance of the ...