Method for manufacturing a mask KU Leuven
The present invention relates to a method for manufacturing a mask structure for a lithography process, the method comprising: - providing a substrate covered with an absorber layer on a side thereof, - providing, over the absorber layer, a patterned layer comprising at least one opening, - forming at least one assist mask feature in the at least one opening; wherein, the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising inducing phase separation of a BCP material, provided in the at least one opening, into a first component ...