Orbital Hall Magnetoresistance in Cr/CoFeB Structures Interuniversity Microelectronics Centre
Spin-orbitronics devices based on spin Hall effect is a strong candidate for new generation memory devices. To realize this device the bilayer structure composed of a ferromagnet and a heavy metal layer should show sizable spin-orbit torque to manipulate magnetization of the devices. In this study, we investigate orbital transport in Cr-based heterostructures, because Cr has sizable orbital Hall angle and good conductivity. We found that orbital ...