Ga + B co-doped Si1-xGex: Low Temperature Epitaxial Growth and Physical Characterization in view of Advanced MOS Devices KU Leuven
Current downscaling of MOS devices goes together with modifications of the transistor geometry, the use of new materials and the introduction of new device concepts. In classical charge-based devices, contact resistance is one of the key parameters determining device performance. Scaling means a reduction of transistor dimensions. The reduction in Source/Drain (S/D) contact area leads to an increase in contact resistance. New approaches are ...