Semiconductors with increased carrier concentration KU Leuven
A semiconductor device comprising: i. a first structure (100) made of a first doped semiconductor material of a first doping type, ii. a metal (300) in contact with the first structure (100), and iii. at least a second structure (200) made of a second doped semiconductor material of the first doping type in contact with the first structure (100), wherein a band off-set for majority charge carriers between the first doped semiconductor material and the second doped semiconductor material is sufficiently large for charge carriers from the second doped semiconductor material to be transferred ...