Channel Switching Effect and Magnetoresistance in Iron Doped Amorphous Carbon Films on Silicon Substrates KU Leuven
Iron doped amorphous carbon films were deposited by pulse laser deposition on n-type silicon substrates. The as-fabricated structure shows a positive magnetoresistance (MR) of 34% at 5 T. Hall measurements show that the carbon film is hole-conducting and therefore a p-n heterojunction forms near the interface so that the current transport channel is transferred from the above carbon films at low temperatures to the Si substrates at high ...