Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices Interuniversity Microelectronics Centre
A method for forming a semiconductor device comprising forming a first transistor structure (10a) and a second transistor structure (20a) separated by a first trench which comprises a first dielectric wall (108) protruding above a top surface of the transistor structures. The first and the second transistor structures each comprise a plurality of stacked nanosheets (102a-b) forming a channel structure, and a source portion and a drain portion horizontally separated by the channel structure. The method further comprises depositing a contact material (136) over the transistor structures and the ...