Microwave FinFET modeling based on artificial neural networks including lossy silicon substrate KU Leuven
Nowadays, FinFET represents a new and promising transistor structure for the aggressive downscaling of the CMOS technology. Typically, the small-signal modeling for FinFET is based on compact models or on equivalent circuit representations. As an alternative to such approaches, a small-signal behavioral model based on artificial neural networks is developed in this paper. Particular attention is devoted to modeling the low-frequency kinks of the ...