Study of Process Technology and Device Architecture for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors KU Leuven
Amorphous oxide semiconductors (AOS) based thin film transistors (TFTs) find potential applications in the field of large area electronics. Among the various AOS, amorphous Indium Gallium Zinc Oxide (a-IGZO) based TFTs have been broadly researched in the display industry. The characteristics such as high mobility, large-area uniformity, transparency, and low-temperature processing make a-IGZO TFTs suitable for next generation Active Matrix ...