Sputtered Epitaxial Perpendicular MTJs for Next-Generation MRAM KU Leuven
Background Magnetic material-based memories are an emerging class of devices promising non-volatility, high-speed and low power. The first generation of memory devices, known as Spin Transfer Torque (STT) magnetic random-access memory (MRAM), are in large scale production for embedded memory replacement. However, slow STT-MRAM write speeds are limiting its application beyond the eFlash space. With a view towards expanding the application ...