Dynamics of the drying defects left by residual ultra-pure water droplets on silicon substrate KU Leuven
Evaporation of sessile droplets with a small contact angle (below 90°) is studied here extensively on silicon substrates. We focused our work on the origin of the creation of watermarks on silicon wafers. A thorough understanding of droplet evaporation is of vital importance for examining the drying rate, the flow patterns observed inside drying drops, and the residual deposits. The concentration of each potential dissolved species (e.g. silica ...