Reliability of thin-film IGZO transistors for logic and memory applications KU Leuven
In the last decade, oxide semiconductors have emerged as a higher performance replacement for standard amorphous silicon thin-film transistors (TFT’s) in display back-plane and flexible electronics. Among different material candidates, Indium-Gallium-Zinc Oxide (IGZO) is the most promising, providing high performance with large area uniformity, low off-currents and low-temperature processing. As a result of the exceptional electrical ...