How to cope with time-dependent variability problems by a combined design and technology development. KU Leuven
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world CMOS devices. Intermittent charging of these defects during operation is responsible for many reliability degradation mechanisms, including Bias Temperature Instability (BTI), Time Dependent Dielectric Breakdown (TDDB), Stress Induced Leakage Current (SILC) and Random Telegraph Noise (RTN). Their decreasing absolute numbers in downscaled ...