Projects
Transition metal dichalcogenides heterostructures University of Antwerp
Understanding and tuning of light matter interactions in transition metal dichalcogenides monolayers and their heterostructures (QuantumTMDs). University of Antwerp
Precision Synthesis of Colloidal Transition Metal Disulfide ME2 (M=Mo, W; E=S, Se) Nanocrystals by Hot Injection Ghent University
Transition metal dichalcogenides are two-dimensional materials with unique optical and electrical properties. Here, their precision synthesis as nanocrystals by colloidal chemistry methods is envisaged. This approach can
lead to a new class of nanomaterials with unmatched and tunable physical and chemical properties. In particular, their surface chemistry and opto-electronic properties will be assessed for applications in displays and ...
Phase Transitions in Ultra-thin Crystal Structures University of Antwerp
Novel two dimensional atomic crystals University of Antwerp
Impact of external factors on band alignment of TMDs with SiO2: WS2 versus WSe2 and MoS2 KU Leuven
Over the past 50 years Si based integrated circuits have been downscaling tremendously to create faster logic chips and high-volume memory circuits. Such scaling required significant technological advances and innovative designs. Unfortunately, as transistor channel lengths have been approaching 10 nm, it became clear that such aggressive scaling would not be sustainable for Si based transistors. In looking for solutions one addresses more ...
Atomic resolution electron microscopy of nano-pores in 2D materials for blue energy. University of Antwerp
Magnetism of two-dimensional electron systems modified by ion implantation KU Leuven
Atomic assessment of paramagnetic defects in 2-dimensional semiconductor layers: MoS2 KU Leuven
For decades, the semiconductor industry has pursued the extensive miniaturization of the transistor. Conventional Si-based devices are however reaching their scaling limits since undesired ‘physics’ effects arise when Si-based transistors are ultra-scaled. A possible solution to overcome these electrostatic control issues and lithography challenges is to incorporate novel 2D materials in future nanoelectronic devices. In this regard, TMDs, ...