Publications
Chosen filters:
Chosen filters:
Stress techniques in advanced transistor architectures: bulk FinFETs and implant-free quantum well transistors KU Leuven
Novel device architectures offer improved scalability but come often at the price of increased layout sensitivity and a reduced or changed effectiveness of stressors and gate-last integration schemes. This work focuses on stress effects in n-type FinFETs and p-type Si 1-xGe x-channel pFETs, and relies mainly on TCAD results. It will be shown that on n-FinFETs, tensile stressed Contact Etch-Stop Layers (t-CESL) are less effective than on planar ...
Study of Analog and RF Performance of Multiple Gate Field Effect Transistors for Future CMOS Technologies (Studie van analoge en RF performantie van meervoudige gate veld effect transistoren voor toekomstige CMOS technologieën) KU Leuven
Het onderwerp van deze thesis is de studie van de analoge en RF performantie van ongedopeerde dubbele gate MOSFETs, ook bekend als FinFETs. Dit device is een mogelijk alternatief voor de planaire bulk MOSFET, omwille van zijn betere elektrostatische controle en hogere immuniteit voor kort-kanaal effecten, en een lagere variabiliteit en betere schaalbaarheid naar toekomstige generaties. In dit werk worden de DC, de laagfrequent analoge en de ...
Design, Fabrication and Characterization of Tunnel Field Effect Transistors for Ultra-Low Power CMOS Applications (Ontwerp, fabricatie en karakterisatie van tunnel veld effect transistoren voor ultra-laag vermogen CMOS toepassingen) KU Leuven
Silicon CMOS has emerged over the last 25 years as the predominant technology of the microelectronics industry. The concept of device scaling has been consistently applied over many technology generations, resulting in consistent improvement in both device density and performance. In the last decade, the shrinking of the transistor dimensions led to short channel effects (SCEs) which decreases the device performance. As a consequence, additional ...
Impedimetric Sensing of DNA with Silicon Nanowire Transistors as Alternative Transducer Principle Hasselt University KU Leuven
Silicon nanowires (SiNW) are highly sensitive to biomolecules. In some publications, changes of SiNW conductance in relation to their concentration levels are displayed. Upon binding, biomolecule charges change the surface potential and, thereby, the SiNW conductance. We discussed earlier that SiNWs can be regarded as long-channel, ion-sensitive field-effect transistors (ISFETs). The choice of a stable working point is important and defines the ...
Functionalized Dithienylthiazolo[5,4-d]thiazoles For Solution-Processable Organic Field-Effect Transistors Hasselt University KU Leuven
A series of 5'-aryl-substituted 2,5-bis(3'-hexylthiophen-2'-yl)thiazolo[5,4-d]thiazole derivatives was synthesized and these expanded semiconductors were investigated as active materials for solution-processable organic field-effect transistors. Field-effect mobilities of up to 10-3 cm2?V-1?s-1 were obtained, representing the first reasonable FET behavior for highly soluble thiazolo[5,4-d]thiazole-based small organic compounds suitable for ...
Functionalized Dithienylthiazolo[5,4-d]thiazoles For Solution-Processable Organic Field-Effect Transistors Vrije Universiteit Brussel
A series of 5?-aryl-substituted 2,5-bis(3?-hexylthiophen-2?-yl)thiazolo[5,4-d]thiazole derivatives was synthesized and these expanded semiconductors were investigated as active materials for solution-processable organic field-effect transistors. Field-effect mobilities of up to 10?3?cm2?V?1?s?1 were obtained, representing the first reasonable FET behavior for highly soluble thiazolo[5,4-d]thiazole-based small organic compounds suitable for ...
Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy Ghent University KU Leuven
To investigate the defects from the gate regrowth process, samples with and without regrowth p-GaN process are fabricated by metalorganic chemical vapor deposition (MOCVD). The DC characteristics indicate larger gate leakage (I-gs) between the GaN channel and the p-GaN gate in the regrowth sample than in the nonregrowth counterpart. In addition, significant Si/O impurities are introduced by the regrowth process at the interface between channel ...