Avalanche photodiode device with a curved absorption region. Interuniversity Microelectronics Centre
The present disclosure proposes an avalanche photodiode (APD) device, in particular, a lateral separate absorption charge multiplication (SACM) APD device, and a method for its fabrication. The APD device comprises a first contact region and a second contact region formed in a semiconductor layer. Further, it comprises an absorption region formed on the semiconductor layer, wherein the absorption region is at least partly formed on a first region of the semiconductor layer, wherein the first region is arranged between the first contact region and the second contact region. The APD device ...