A stress sensor suitable for measuring mechanical stress in a layered metallization structure of a microelectronic component KU Leuven
The invention is related to a sensor for measuring mechanical stress in a layered metallization structure such as the back end of line portion of an integrated circuit die. The sensor operates as a field effect transistor comprising a gate electrode (1), gate dielectric (5), channel (6) and source and drain electrodes (7,8), wherein the gate electrode is a conductor (1) of a first metallization level and the source and drain electrodes are two interconnect vias (7,8), connecting the channel (6) to respective conductors (3,4) in an adjacent level. At least one of the interconnect vias is ...