NANOPORE FET SENSOR WITH NON-LINEAR POTENTIAL PROFILE Interuniversity Microelectronics Centre
A new architecture of the nanopore field-effect transistor is proposed. It can align the smaller end of an asymmetric nanopore to the transistor current channel of a silicon transistor. The asymmetry of the nanopore means a dramatic local potential transition at the pore-end, which can be achieved by geometrical morphology of the pore, the surface charging, and the differential in fluids. To align the current channel to the pore-end, we suggest the band-gap engineering, doping engineering, and side-gating. To fabrication such nanopore FET in parallel, we can combine the DUV lithography with ...