Projects
Lattice location study of dopant imputities in group-IV semiconductors. KU Leuven
Ab-initio Investigation of Amorphous Semiconductors KU Leuven
Amorphous oxide semiconductors AOS have been attracting much attention over the last decade for their quality as active layer in thin film transistors (TFT). These materials are of particular interest for the display industry since they are processable on large areas, at low temperature while presenting a large mobility (~10 cm^2/Vs). The amorphous nature guarantees the uniformity of the film over a large area and its low processing ...
Minority-site occupancy of transition metals in dilute magnetic semiconductors. KU Leuven
BOF NI project: Designing metal oxides semiconductors towards a lower bandgap and a higher mobility Hasselt University
Porphyrinoid-based molecular semiconductors for organic photovoltaics and photodetectors Hasselt University
Design and synthesis of organic semiconductors for nearinfrared photodetection with bulk heterojunction organic cavity devices Hasselt University
Unveiling the defect chemistry of doped Zinc oxide semiconductors towards improved photocatalytic performance in hydrogen production. Hasselt University
Effects of particle size on the luminescence of doped semiconductors: from bulk to nano Ghent University
Luminescent materials are currently intensively used for lighting, signalling and display applications. Often, rare earth doped materials are used, for which the behaviour at a macroscopic level is well-known. The proposed fundamental research aims at the effects of the reduction of the size of the host lattice (to a nano scale) on the emission properties of the dopant ion, by evaluation of the emission spectrum, the quantum efficiency and ...
Atomic assessment of paramagnetic defects in 2-dimensional semiconductor layers: MoS2 KU Leuven
For decades, the semiconductor industry has pursued the extensive miniaturization of the transistor. Conventional Si-based devices are however reaching their scaling limits since undesired ‘physics’ effects arise when Si-based transistors are ultra-scaled. A possible solution to overcome these electrostatic control issues and lithography challenges is to incorporate novel 2D materials in future nanoelectronic devices. In this regard, TMDs, ...