Electrical control of racetrack memory devices based on SAF materials KU Leuven
BACKGROUND As the demand for faster, smaller, and more power-efficient devices is increasing, conventional memories such as SRAM and DRAM are reaching their scaling limits. Recently, STT-MRAM (spin transfer torque magnetic randomaccess memory) has been successfully introduced as a compelling candidate for on-chip memory applications. This first success calls for further explorations of other spintronics concepts. Alternative switching ...