Monolithic iii-v/si waveguide phase modulator KU Leuven
The present invention provides a monolithic integrated, waveguide carrier depletion phase modulator, specifically of the III-V/Si-based heterogeneous type. The modulator includes a monolithically integrated III-V/Si p-n junction diode, in order to modulate the phase of light, which propagates through a waveguide of the modulator. The waveguide includes a waveguide base made of a first conductivity type Si-based semiconductor material, at least one groove formed in a surface of the waveguide base, and an epitaxial region formed on the waveguide base in the groove. The epitaxial region 13 is ...