Publications

We present a (1-D) SCAPS device model to address the following: (i) the surface passivation mechanisms (i.e. field-effect and chemical), (ii) their impact on the CIGS solar cell performance for varying CIGS absorber thickness, (iii) the importance of fixed charge type (+/-) and densities of fixed and interface trap charges, and (iv) the reasons for discrete gains in the experimental cell efficiencies (previously reported) for varying CIGS ...

In this work, metal-insulator-semiconductor structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al2O3), silicon nitride, and silicon oxide (SiOx) to be used as passivation layers in Cu(In,Ga)Se-2 (CIGS) thin-film solar cells. The investigated stacks consisted of SLG/Mo/CIGS/insulator/Al. Raman scattering and photoluminescence measurements were done to verify the insulator deposition influence on ...

In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si: H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion ...

2H-Benzotriazol-2-ylethylammonium bromide and iodide and its difluorinated derivatives are synthesized and employed as interlayers for passivation of formamidinium lead triiodide (FAPbI3) solar cells. In combination with PbI2 and PbBr2, these benzotriazole derivatives form two-dimensional (2D) Ruddlesden-Popper perovskites (RPPs) as evidenced by their crystal structures and thin film characteristics. When used to passivate n-i-p FAPbI3 solar ...

The rear side of a pressure sensor diaphragm is prepared with an additional diamond layer as protective coating against harsh media. The preparation sequence for the diamond coating is developed as a simple backend process, combining only two additional steps in the standard process. These are the local seeding of nanodiamond layer and the low-temperature diamond growth at <300 degrees C in a linear antenna microwave plasma-enhanced chemical ...

Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se-2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 degrees C, the SiOx passivation layer ...

Light management in crystalline silicon solar cells has conventionally been achieved by random micropyramid texturing but other non-conventional surface texturing methods, such as diffraction gratings, have also attracted attention with the objective of attaining near-ideal light trapping. Unlike previous investigations on the subject in which the focus was predominantly to minimize optical losses, we report on surface passivation difference ...

In Cu(In,Ga)Se-2 (CIGS) thin-film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Herein, metal-insulator-semiconductor samples are used to investigate and compare the passivation effects of Al2O3 and HfO2 at the interface with CIGS. Capacitance-voltage-frequency measurements allow to qualitatively and quantitatively assess the existence of high negative charge density (Q (f) ...

In the past years, the strategies used to break the Cu(In,Ga)Se-2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the ...

In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfOx was applied in a metal-insulator-semiconductor ...