An in situ investigation of the surface chemistry during the nucleation and growth of cobalt and nickel using atomic layer deposition Ghent University
This proposal aims to provide a thorough understanding of the surface chemistry and physics during atomic layer deposition (ALD) of cobalt and nickel for applications in microelectronics and catalysis. In microelectronics, ALD of high quality, continuous metallic films is required, and preferably only on specific parts of the substrate, so-called area-selective ALD. As for catalysis, deposition of metal or bimetallic nanoparticles with ...