A method for forming a buried metal line. Interuniversity Microelectronics Centre
According to an aspect of the present inventive concept there is provided a method for forming a buried metal line in a substrate, the method comprising: at a position between a pair of semiconductor structures protruding from the substrate, forming a metal line trench in the substrate at a level below a base of each semiconductor structure of the pair, wherein forming the metal line trench comprises: etching an upper trench portion in the substrate, forming a spacer on sidewall surfaces of the upper trench portion, the spacer exposing a bottom surface of the upper trench portion, and while ...