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Electron spin resonance study of near interfacial point defects in semiconductor (GaAs, Si)/insulator heterostructures KU Leuven
It goes without saying that point defects play a crucial role in semiconductors, either benificial or detrimental. Introduced as dopants, they define one of the most typical electrical characteristics of semiconductors. But often, point defects −mostly intrinsic ones−may play a most detrimental role such as encountered at semiconductor/insulator interfaces where they may be at the origin of an untolerable amount of interface traps and/or ...
Hysteresis-Free Planar Perovskite Solar Module with 19.1% Efficiency by Interfacial Defects Passivation Interuniversity Microelectronics Centre
In few years, perovskite solar devices have reached high efficiency on lab scale cells. Upscaling to module size, effective perovskite recipe and posttreatment are of paramount importance to the breakthrough of the technology. Herein this work, the development of a low-temperature planar n-i-p perovskite module (11 cm(2) aperture area, 91% geometrical fill factor) is reported on, exploiting the defect passivation strategy to achieve an ...
Mechanical implications of interfacial defects between femoral hip implants and cement: a finite element analysis of interfacial gaps and interfacial porosity Vrije Universiteit Brussel
Two types of defect between femoral hip implants and cement have been identified. Interfacial porosity arises from cement shrinkage during curing and presents as pores randomly located along the stem. Interfacial gaps are much larger stem-cement separations caused by air introduced during stem insertion. To investigate the mechanical consequences of both types of defect, a finite element analysis model was created on the basis of a computed ...
Multi-frequency electron spin resonance analysis of interfacial Ge dangling bond defects in condensation-grown (1 0 0)Si/SiO2/Si1-xGex/SiO2 KU Leuven
Multi-frequency electron spin resonance (ESR) study of the GePb1 Ge dangling bond (DB) interface defect, appearing identically at both SiO2/GexSi1-x interfaces in condensation-grown SiO2/GexSi1-x/SiO2/(100)Si heterostructures (0.28x0.93), shows that the ESR signal width is dominated by inhomogeneous broadening due to a strain-induced spread in g. For the x=0.73 case, this results in a frequency ()-dependent peak-to-peak broadening of ...
Inherent interfacial Si dangling bond point defects in thermal (110)Si/SiO2 KU Leuven
A low-temperature electron spin resonance (ESR) study has been carried out on thermal (1 1 0)Si/SiO2 as a function of oxidation temperature Tox with the intend to evaluate on atomic level the interface nature in terms of occurring inherent point defects which are at the origin of technologically detrimental traps. This reveals a remarkably high density of Pb-type interface centers (interfacial Si dangling bonds), which variant, based on ...
Paramagnetic point defects at interfacial layers in biaxial tesile strained (100)Si/SiO2 KU Leuven
A comparative electron spin resonance study is reported on (100) Si/ SiO2 entities, grown by thermal oxidation of biaxial tensile strained (100)Si (sSi) layers, epitaxially grown on a strain relaxed Si0.8 Ge0.2 buffer layer, and standard (100)Si. In the as-oxidized state a significant decrease (∼50%) of inherently incorporated interface defects, Pb0 and Pb1, is observed, i.e., the sSi/ SiO2 interface is found to be inherently significantly ...
Calibrating SoilGen2 for interglacial soil evolution in the Chinese Loess Plateau considering soil parameters and the effect of dust addition rhythm Ghent University
To better understand interglacial paleosol development by quantifying the paleosol development processes on the Chinese Loess Plateau (CLP), we need a soil genesis model calibrated for long timescales. Here, we calibrate a process-based soil genesis model, SoilGen2, by confronting simulated and measured soil properties for the Holocene and MIS-13 paleosols formed in the CLP for various parameter settings. The calibration was made sequentially on ...