Ultrasonic transducer array device KU Leuven
The present invention relates to an ultrasonic transducer multilayer structure, comprising: a semiconductor layer stack defining a diode, a micro-machined ultrasonic transducer, MUT, layer stack being electrically in series with said diode and comprising a first electrically conductive layer disposed at least partly on the diode, a cavity extending over a region comprising at least a portion of the semiconductor layer stack and the first electrically conductive layer, wherein the MUT layer stack comprises a membrane extending at least partly over said region. An ultrasonic transducer ...