Practical Considerations for Better Implementation of GaN in Power Electronic Converters KU Leuven
Gallium nitride (GaN) material devices are considered as a promising device for next-generation power electronics due to its intrinsic properties such as high-breakdown field, high-electron mobility, low ON-resistance, and good thermal conductivity. Due to the introduction of GaN materials, applications such as power converters have obtained remarkable improvements. Therefore, the aim of this project is to address the implications of ...