Publications
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Sidewall crystalline orientation effect on post-treatments for a replacement metal gate bulk fin field effect transistor KU Leuven
The crystalline orientation effect is investigated for post-treatments of a replacement metal gate (RMG) p-type bulk fin field effect transistor (FinFET). After post-deposition annealing (PDA) and SF6 plasma treatment, the hole mobility is improved. From low-frequency noise analysis, reduction of the trap density and noise level is observed in PDA- and SF6-plasma-treated devices. (100) sidewall-oriented FinFETs show a lower noise level because ...
Phase transition and field effect topological quantum transistor made of monolayer $MoS_{2}$ University of Antwerp
We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q(2)) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. ...
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor KU Leuven University of Antwerp
In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a ...
1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor KU Leuven
The origin of performance difference between gate-first (GF) and replacement metal gate (RMG) fin field effect transistors (FinFETs) is investigated. Although RMG technology has the advantage of low thermal-budget, a 1.5 times lower effective hole mobility is shown for the high-k last (HKL) FinFET. Based on low frequency noise analysis, it is shown that the carrier transport is due to the carrier number fluctuation with correlated mobility ...
Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations KU Leuven
The 2-MeV electron radiation damage of Si 1-xGe x source/drain (S/D) p-type metal oxide semiconductor field effect transistor (p-MOSFET) with different Ge concentrations is studied. After irradiation at fluences below 2 × 10 17 e/cm 2, the drain current and the maximum hole mobility decrease with increasing electron fluence for all Ge concentrations. It suggests that lattice defects are introduced by electron irradiation. In the case of Si 1-xGe ...
Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping KU Leuven
© 2016 American Vacuum Society. A novel method for fast and flexible fin field effect transistor (FinFET) prototyping using a Ga+ focused ion beam is presented. The fin width and height control is explored, aiming for the successful fabrication of prototypes. This method results in fins with negligible Ga incorporation, when compared to traditional focused ion beam milling techniques. Our method for multiple fin FinFET prototyping enables ...
Probing doping conformality in fin shaped field effect transistor structures using resistors KU Leuven
For scaling complementary metal oxide semiconductor devices toward the ITRS goals for the 32 nm technology node and beyond, fin shaped field effect transistor (finFET)-based structures have shown immense potential due to their scalability by maintaining high drive current at scaled voltages and smaller gate dimensions. Due to the three-dimensional geometry of finFETs and the need to obtain identical lateral dopant profiles on the top and the ...