Physical Modeling of Reliability Issues in Ordered and Disordered Systems Based on Consistent Carrier and Phonon Transport Treatment KU Leuven
Degradation mechanisms plaguing the modern metal-oxide-semiconductor field-effect-transistor (MOSFET) can substantially limit its lifetime and prevent introduction of novel device architectures and further MOSFET scaling. In 3D transistor architectures, such as fin, nanowire (NW), nanosheet (NC), forksheet (FS) FETs, a superposition of hot-carrier degradation (HCD) and self-heating (SH) was flagged to be the most detrimental reliability ...