Ferroelectric memories: multi-layers stacks with tailored physical and electric properties by atomic layer deposition KU Leuven
In the last 5 years, has been a surge of technological interest in ferroelectric hafnium zirconium oxides (HZO) thin films as ferroelectric materials for emerging memories. Ferroelectricity in fluorite type of ferroelectric oxides has been explained by appearance of polar orthorhombic Pca21 phase in HZO or HfO2 polymorphic oxides. Thickness downscaling, grain size, or doping, mainly with transitional metals, are known to favor stabilization ...