Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations Vrije Universiteit Brussel KU Leuven
Advanced scaling and the introduction of new materials in the metal-oxide-semiconductor field-effect transistor (MOSFET) raise concerns about its reliability. Several degradation mechanisms, depending on operating conditions and time, can cause a significant change of the transistor parameters. The transistor area plays a large role when it comes to aging. In large-area MOSFETs, aging appears deterministic, while in small-area devices it is ...