Engineering Two-Dimensional Materials and Their Surroundings for Improved Electrical Performance KU Leuven
2D materials, promising excellent electrostatic control, are being investigated to replace Si in highly scaled field-effect transistors (FETs). Performance of these 2D FETs is determined in large part by the transport properties of the 2D material. While predictions for free-standing 2D materials show high electron mobilities (>200cm2/Vs), the mobilities in practice turn out much lower (<30 cm2/Vs). This discrepancy is just one ...