Manufacturing method of a III-nitride device and associated III-nitride device KU Leuven
A III-nitride device comprising a substrate (1) made of a semiconductor material; a stack of active layers (2-5) on the substrate, each layer comprising a III-nitride material; a gate (8), a source (9) and a drain (10) contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively the gate, the source and the drain contact in the substrate; and a trench in the substrate extending from a backside of the substrate (side opposite to the one in contact with the stack of active layers) to an underlayer (2) of the stack of active layers in contact ...