A method for forming a via hole self-aligned with a metal block on a substrate. Interuniversity Microelectronics Centre
According to an aspect of the present inventive concept there is provided a method for forming a via hole (200) self-aligned with a metal block (190) on an interlayer dielectric layer (110) of a substrate, the method (300) comprising: forming a metal comprising layer (120) and a dielectric layer (130) on the interlayer dielectric layer (110), forming a plurality of parallel spacer line structures (140) comprising sidewall oxide layers (150) on the dielectric layer (130) such that a portion of the dielectric layer (130) is exposed between adjacent sidewall oxide layers (150), forming a first ...