Physical Modeling of transistor degradation effects for reliable circuit design beyond 7 nm node KU Leuven
In order to improve transistor performance from one generation to another, new materials and new device architectures are being continuously introduced (e.g., nano-sheet transistors). But with these innovations, new challenges appear for ensuring their reliability, i.e., limited degradation during operation. As transistors are downscaled toward atomic dimensions, each stochastically behaving defect has potentially a substantial impact on the ...