Modeling of the tunnel field-effect transistor. KU Leuven
The nanowire-based tunnel field-effect transistor (tunnel-FET) is a promising candidate to replace the metal-oxide-semiconductor field-effect transistor. Due to the absence of a limit on the subthreshold swing, the tunnel-FET allows a reduction of the supply voltage below the 1 V plateau. The perspective of such a breakthrough results in a strong worldwide interest in the tunnel-FET. Despite the expanding research domain and out own important ...