A method for producing an integrated circuit chip comprising a back-side power delivery network Interuniversity Microelectronics Centre
According to the method of the invention, deep trenches (10) are formed in a semiconductor layer (1) that forms the top layer of a device wafer, the trenches (10) going through the complete thickness of the layer. The trenches are filled with a sacrificial material, that is subsequently etched back and covered 10 with a capping layer (15) thereby forming sacrificial buried rails (13). After processing the active devices of the IC on the front surface of the semiconductor layer (1), including connections (22,23) to the sacrificial rails, the device wafer is bonded face down to a carrier wafer, ...